Heterogeneous integration of thin-film compound semiconductor lasers and SU8 waveguides on SiO2/Si
Identifieur interne : 004051 ( Main/Repository ); précédent : 004050; suivant : 004052Heterogeneous integration of thin-film compound semiconductor lasers and SU8 waveguides on SiO2/Si
Auteurs : RBID : Pascal:10-0492846Descripteurs français
- Pascal (Inist)
- Imagerie thermique, Guide onde optique, Laser semiconducteur, Guide onde, Tête lecture, Analyseur spectre, Imagerie, Couche mince, Fibre multimode, Composé binaire, Silicium Oxyde, Gallium Arséniure, Indium Arséniure, Polymère, Emission latérale, Liaison métallique, Courant seuil, Densité courant, Optique intégrée, Technologie planaire, InGaAs/GaAs, SiO2, O Si, 0130C, 4279G, Photonique.
- Wicri :
- concept : Polymère.
English descriptors
- KwdEn :
- Binary compounds, Current density, Edge emission, Gallium Arsenides, Imagery, Indium Arsenides, Integrated optics, Metallic bonds, Multimode fibers, Optical waveguides, Photonics, Planar technology, Polymers, Read head, Semiconductor lasers, Silicon Oxides, Spectral analyzer, Thermal imaging, Thin films, Threshold current, Waveguides.
Abstract
We present the heterogeneous integration of a 3.8 μm thick InGaAs/GaAs edge emitting laser that was metal-metal bonded to SiO2/Si and end-fire coupled into a 2.8 μm thick tapered SU8 polymer waveguide integrated on the same substrate. The system was driven in pulsed mode and the waveguide output was captured on an IR imaging array to characterize the mode. The waveguide output was also coupled into a multimode fiber, and into an optical head and spectrum analyzer, indicating lasing at ∼997 nm and a threshold current density of 250 A/cm2.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Heterogeneous integration of thin-film compound semiconductor lasers and SU8 waveguides on SiO<sub>2</sub>/Si</title><author><name sortKey="Palit, Sabarni" uniqKey="Palit S">Sabarni Palit</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electrical and Computer Engineering, Duke University</s1><s2>Durham, NC 27708</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Durham, NC 27708</wicri:noRegion></affiliation></author><author><name sortKey="Kirch, Jeremy" uniqKey="Kirch J">Jeremy Kirch</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Electrical and Computer Eng., UW-Madison</s1><s2>WI 53706</s2><s3>USA</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>États-Unis</country><placeName><region type="state">Wisconsin</region></placeName></affiliation></author><author><name sortKey="Mawst, Luke" uniqKey="Mawst L">Luke Mawst</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Electrical and Computer Eng., UW-Madison</s1><s2>WI 53706</s2><s3>USA</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>États-Unis</country><placeName><region type="state">Wisconsin</region></placeName></affiliation></author><author><name sortKey="Kuech, Thomas" uniqKey="Kuech T">Thomas Kuech</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Chemical and Biological Eng., UW-Madison</s1><s2>WI 53706</s2><s3>USA</s3><sZ>4 aut.</sZ></inist:fA14><country>États-Unis</country><placeName><region type="state">Wisconsin</region></placeName></affiliation></author><author><name sortKey="Jokerst, Nan Marie" uniqKey="Jokerst N">Nan Marie Jokerst</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electrical and Computer Engineering, Duke University</s1><s2>Durham, NC 27708</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Durham, NC 27708</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">10-0492846</idno><date when="2010">2010</date><idno type="stanalyst">PASCAL 10-0492846 INIST</idno><idno type="RBID">Pascal:10-0492846</idno><idno type="wicri:Area/Main/Corpus">003B10</idno><idno type="wicri:Area/Main/Repository">004051</idno></publicationStmt><seriesStmt><idno type="ISSN">0277-786X</idno><title level="j" type="abbreviated">Proc. SPIE Int. Soc. Opt. Eng.</title><title level="j" type="main">Proceedings of SPIE, the International Society for Optical Engineering</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Binary compounds</term><term>Current density</term><term>Edge emission</term><term>Gallium Arsenides</term><term>Imagery</term><term>Indium Arsenides</term><term>Integrated optics</term><term>Metallic bonds</term><term>Multimode fibers</term><term>Optical waveguides</term><term>Photonics</term><term>Planar technology</term><term>Polymers</term><term>Read head</term><term>Semiconductor lasers</term><term>Silicon Oxides</term><term>Spectral analyzer</term><term>Thermal imaging</term><term>Thin films</term><term>Threshold current</term><term>Waveguides</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Imagerie thermique</term><term>Guide onde optique</term><term>Laser semiconducteur</term><term>Guide onde</term><term>Tête lecture</term><term>Analyseur spectre</term><term>Imagerie</term><term>Couche mince</term><term>Fibre multimode</term><term>Composé binaire</term><term>Silicium Oxyde</term><term>Gallium Arséniure</term><term>Indium Arséniure</term><term>Polymère</term><term>Emission latérale</term><term>Liaison métallique</term><term>Courant seuil</term><term>Densité courant</term><term>Optique intégrée</term><term>Technologie planaire</term><term>InGaAs/GaAs</term><term>SiO2</term><term>O Si</term><term>0130C</term><term>4279G</term><term>Photonique</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Polymère</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We present the heterogeneous integration of a 3.8 μm thick InGaAs/GaAs edge emitting laser that was metal-metal bonded to SiO<sub>2</sub>/Si and end-fire coupled into a 2.8 μm thick tapered SU8 polymer waveguide integrated on the same substrate. The system was driven in pulsed mode and the waveguide output was captured on an IR imaging array to characterize the mode. The waveguide output was also coupled into a multimode fiber, and into an optical head and spectrum analyzer, indicating lasing at ∼997 nm and a threshold current density of 250 A/cm<sup>2</sup>.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0277-786X</s0></fA01><fA02 i1="01"><s0>PSISDG</s0></fA02><fA03 i2="1"><s0>Proc. SPIE Int. Soc. Opt. Eng.</s0></fA03><fA05><s2>7607</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>Heterogeneous integration of thin-film compound semiconductor lasers and SU8 waveguides on SiO<sub>2</sub>/Si</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>Optoelectronic interconnects and component integration IX : 25-27 January 2010, San Francisco, California, United States</s1></fA09><fA11 i1="01" i2="1"><s1>PALIT (Sabarni)</s1></fA11><fA11 i1="02" i2="1"><s1>KIRCH (Jeremy)</s1></fA11><fA11 i1="03" i2="1"><s1>MAWST (Luke)</s1></fA11><fA11 i1="04" i2="1"><s1>KUECH (Thomas)</s1></fA11><fA11 i1="05" i2="1"><s1>JOKERST (Nan Marie)</s1></fA11><fA12 i1="01" i2="1"><s1>GLEBOV (Aleksei L′vovich)</s1><s9>ed.</s9></fA12><fA12 i1="02" i2="1"><s1>CHEN (Ray T.)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>Department of Electrical and Computer Engineering, Duke University</s1><s2>Durham, NC 27708</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>5 aut.</sZ></fA14><fA14 i1="02"><s1>Department of Electrical and Computer Eng., UW-Madison</s1><s2>WI 53706</s2><s3>USA</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA14 i1="03"><s1>Department of Chemical and Biological Eng., UW-Madison</s1><s2>WI 53706</s2><s3>USA</s3><sZ>4 aut.</sZ></fA14><fA18 i1="01" i2="1"><s1>SPIE</s1><s3>USA</s3><s9>org-cong.</s9></fA18><fA20><s2>76070I.1-76070I.8</s2></fA20><fA21><s1>2010</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA25 i1="01"><s1>SPIE</s1><s2>Bellingham, Wash.</s2></fA25><fA26 i1="01"><s0>0-8194-8003-7</s0></fA26><fA26 i1="02"><s0>978-0-8194-8003-3</s0></fA26><fA43 i1="01"><s1>INIST</s1><s2>21760</s2><s5>354000174695870130</s5></fA43><fA44><s0>0000</s0><s1>© 2010 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>11 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>10-0492846</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Proceedings of SPIE, the International Society for Optical Engineering</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>We present the heterogeneous integration of a 3.8 μm thick InGaAs/GaAs edge emitting laser that was metal-metal bonded to SiO<sub>2</sub>/Si and end-fire coupled into a 2.8 μm thick tapered SU8 polymer waveguide integrated on the same substrate. The system was driven in pulsed mode and the waveguide output was captured on an IR imaging array to characterize the mode. 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